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Table 1 Fitted parameters of GaAs, InP and InSb

From: Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range

  GaAs GaAs InP InSb InSb InSb
  n-doped p-doped n-doped n-doped p-doped undoped
ω p (1014 rad/s) 3.33 ± 0.01 4.44 ± 0.02 4.70 ± 0.01 2.82 ± 0.01 0.63 ± 0.01 0.57 ± 0.01
ω p (cm −1) 1769.2 ± 1.9 2356.4 ± 9.1 2494.1 ± 1.8 1495.2 ± 1.83 332.6 ± 1.49 302.4 ± 0.33
τ p (10−1 ps) 0.71 ± 0.01 0.09 ± 0.01 0.71 ± 0.01 2.65 ± 0.04 0.75 ± 0.01 5.16 ± 0.06
ω L (1013 rad/s) 5.06 ± 0.01 5.06 ± 0.01 5.73 ± 0.01 3.38 ± 0.01 3.38 ± 0.01 3.38 ± 0.01
ω L (cm −1) 268.4 ± 0.1 268.5 ± 0.2 303.9 ± 0.1 179.4 ± 0.13 179.4 ± 0.06 179.5 ± 0.06
τ L (ps) 2.79 ± 0.27 1.95 ± 0.29 3.01 ± 0.24 1.81 ± 0.13 1.90 ± 0.04 1.99 ± 0.04
A L 2.13 ± 0.03 2.15 ± 0.09 2.89 ± 0.04 2.02 ± 0.07 2.00 ± 0.01 2.02 ± 0.01
ε 11.58 ± 0.01 11.34 ± 0.02 10.01 ± 0.01 15.68 ± 0.03 15.74 ± 0.01 15.86 ± 0.01
σ 0 (kS/m) 69.46 ± 0.54 16.54 ± 0.22 139.06 ± 0.77 186.35 ± 2.63 2.51 ± 0.04 14.83 ± 0.17