Table 1 Fitted parameters of GaAs, InP and InSb
From: Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range
GaAs | GaAs | InP | InSb | InSb | InSb | |
|---|---|---|---|---|---|---|
n-doped | p-doped | n-doped | n-doped | p-doped | undoped | |
ω p (1014 rad/s) | 3.33 ± 0.01 | 4.44 ± 0.02 | 4.70 ± 0.01 | 2.82 ± 0.01 | 0.63 ± 0.01 | 0.57 ± 0.01 |
ω p (cm −1) | 1769.2 ± 1.9 | 2356.4 ± 9.1 | 2494.1 ± 1.8 | 1495.2 ± 1.83 | 332.6 ± 1.49 | 302.4 ± 0.33 |
τ p (10−1 ps) | 0.71 ± 0.01 | 0.09 ± 0.01 | 0.71 ± 0.01 | 2.65 ± 0.04 | 0.75 ± 0.01 | 5.16 ± 0.06 |
ω L (1013 rad/s) | 5.06 ± 0.01 | 5.06 ± 0.01 | 5.73 ± 0.01 | 3.38 ± 0.01 | 3.38 ± 0.01 | 3.38 ± 0.01 |
ω L (cm −1) | 268.4 ± 0.1 | 268.5 ± 0.2 | 303.9 ± 0.1 | 179.4 ± 0.13 | 179.4 ± 0.06 | 179.5 ± 0.06 |
τ L (ps) | 2.79 ± 0.27 | 1.95 ± 0.29 | 3.01 ± 0.24 | 1.81 ± 0.13 | 1.90 ± 0.04 | 1.99 ± 0.04 |
A L | 2.13 ± 0.03 | 2.15 ± 0.09 | 2.89 ± 0.04 | 2.02 ± 0.07 | 2.00 ± 0.01 | 2.02 ± 0.01 |
ε ∞ | 11.58 ± 0.01 | 11.34 ± 0.02 | 10.01 ± 0.01 | 15.68 ± 0.03 | 15.74 ± 0.01 | 15.86 ± 0.01 |
σ 0 (kS/m) | 69.46 ± 0.54 | 16.54 ± 0.22 | 139.06 ± 0.77 | 186.35 ± 2.63 | 2.51 ± 0.04 | 14.83 ± 0.17 |