Table 1 Properties of samples after diamond turning (see Ref. [7]). For the investigations presented here only samples A and D have been used
From: Characteristics of diamond turned NiP smoothed with ion beam planarization technique
Sample | Spatial wavelength | Depth of turning marks | Surface roughness |
|---|---|---|---|
A | 1.5 μm | 20 nm | 6.49 nm |
B | 6 μm | 60 nm | 19.91 nm |
C | 3.5 μm | 20 nm | 7.63 nm |
D | 6 μm | 20 nm | 6.51 nm |
E | 6 μm | 10 nm | 4.99 nm |
F | 25 μm | 60 nm | 16.4 nm |