Fig. 5
From: Integrated Er/Si Schottky Photodetectors on the end facet of optical waveguides
(a) Measured responsivity at 1550 nm in function of the increased reverse bias applied. (b) Responsivity of the photodetector in the range of 1540–1570 nm. (c) Dark current of the photodetector (black) and Increase of the current (red) due to the photogeneration of charge carriers when the laser beam approaches the photodetector. (d) Responsivity of the photodetector as function of the bias voltage applied to the junction, evaluated by measuring the photogenerated current with a lock-in technique (red) and with a source-meter (black)