Fig. 1
From: Design of high performance and low resistive loss graphene solar cells
a 3D schematic of G-SiO2-Si-SiO2 solar cell. A 10 nm SiO2, a 50 nm absorption layer (Si), and a 240 nm SiO2 substrate are considered. b A detailed unit cell of G-SiO2-Si-SiO2 solar cell. The thickness of GNR is set to 0.5 nm. c A detailed unit cell of Ag-SiO2-Si-SiO2 solar cell. An Ag strip with triangle cross section with 60 nm height and 80 nm width on a 10 nm SiO2, 50 nm absorption layer (Si), and 240 nm SiO2 substrate. For the top and the bottom sides of the unit cell, a perfectly matched layer (PML), and for lateral sides, the periodic boundary condition (PBC) is considered