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Table 2 Crystallization parameters of the specimens

From: Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold

Specimen name

Annealing treatment

Area: c-HfO2 to amorphous

Scherrer-size (nm)

Density (gcm−3)

Amorphous

n.a

0

n.a

9.29

Intermediate

1 h @ 500 °C

0.22 ± 0.02

1.5

8.86

Crystalline

5 h @ 500 °C

0.30 ± 0.01

1.9

8.78