From: Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold
Specimen name
Annealing treatment
Area: c-HfO2 to amorphous
Scherrer-size (nm)
Density (gcm−3)
Amorphous
n.a
0
9.29
Intermediate
1 h @ 500 °C
0.22 ± 0.02
1.5
8.86
Crystalline
5 h @ 500 °C
0.30 ± 0.01
1.9
8.78