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Table 2 Parameters A, B, C and D and layer thickness d for fitting Ti layer using the four-parameter model (equation 1) for three different SiO2 thicknesses (300, 500 and 800 nm)

From: Precise spectrophotometric method for semitransparent metallic thin-film index determination using interference enhancement

SiO2 thickness

A

B (μm−1)

C

D (μm)

d (nm)

300

0.546

3.52

4.05

-0.654

28.5

500

0.897

2.99

3.98

-0.685

28.9

800

0.779

3.41

4.13

-0.650

27.2