Fig. 1
From: Fabrication of a light-emitting device based on the CdS/ZnS spherical quantum dots
(a) Cross-section schematic of a white-QLED with a device structure of ITO/ ZnO / QD active layers/CBP/ MoO3/ Al films. ZnO layer was prepared by spin coaing, QDs film was formed by EPD technique and CBP, MoO3, and Al were deposited by sequential thermal evaporation on top of the ZnO/QD layers. (b) Energy level schematic diagram, and (c) band profile of CdS/ZnS/CdS/ZnS colloidal spherical QD