Skip to main content
Fig. 4 | Journal of the European Optical Society-Rapid Publications

Fig. 4

From: Stimulated Raman scattering simulation for imaging optimization

Fig. 4

Imaged and simulated beads with intensity line profiles of 60 μm length in the insets. The top row are 20 μm beads imaged with carrier and probe powers of 24.7 mW and 14.6 mW, respectively. The lock-in settings were optimized for an object size with the optimal settings simulation: a for 1 μm, c for 20 μm, e for 2 μm, g for 20 μm. The bottom row (b, d, f and h, respectively) are beads simulated with the same parameters and applied powers. The four left-hand side images (a, b, c and d) are imaged and simulated with the single object criteria, and the right-hand side (e, f, g and h) for the tightly packed sample criteria. Scale bars: 20 μm

Back to article page